IRFP330 Datasheet. Specs and Replacement
Type Designator: IRFP330 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 99 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO3P
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IRFP330 substitution
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IRFP330 datasheet
irfp3306pbf.pdf
PD - 97128 IRFP3306PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt R... See More ⇒
irfp3306.pdf
isc N-Channel MOSFET Transistor IRFP3306 IIRFP3306 FEATURES Static drain-source on-resistance RDS(on) 4.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switc... See More ⇒
Detailed specifications: IRFP251, IRFP252, IRFP253, IRFP254, IRFP254A, IRFP255, IRFP260, IRFP264, AON6414A, IRFP331, IRFP332, IRFP333, IRFP340, IRFP340A, IRFP341, IRFP342, IRFP343
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