IRFP330
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP330
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 99
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO3P
IRFP330
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP330
Datasheet (PDF)
0.1. Size:296K international rectifier
irfp3306pbf.pdf
PD - 97128IRFP3306PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3m:l Uninterruptible Power Supplyl High Speed Power Switchingmax. 4.2m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)160A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtR
0.3. Size:296K infineon
irfp3306pbf.pdf
PD - 97128IRFP3306PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3m:l Uninterruptible Power Supplyl High Speed Power Switchingmax. 4.2m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)160A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtR
0.4. Size:242K inchange semiconductor
irfp3306.pdf
isc N-Channel MOSFET Transistor IRFP3306IIRFP3306FEATURESStatic drain-source on-resistance:RDS(on)4.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc
Datasheet: IRFP251
, IRFP252
, IRFP253
, IRFP254
, IRFP254A
, IRFP255
, IRFP260
, IRFP264
, IRF630
, IRFP331
, IRFP332
, IRFP333
, IRFP340
, IRFP340A
, IRFP341
, IRFP342
, IRFP343
.