All MOSFET. IXFP5N100PM Datasheet

 

IXFP5N100PM MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFP5N100PM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33.4 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-220

 IXFP5N100PM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFP5N100PM Datasheet (PDF)

 ..1. Size:115K  ixys
ixfp5n100pm.pdf

IXFP5N100PM
IXFP5N100PM

Advance Technical InformationVDSS = 1000VPolarTM HiPerFETTMIXFP5N100PMID25 = 2.3APower MOSFET RDS(on) 2.8 (Electrically Isolated Tab)N-Channel Enhancement ModeOVERMOLDEDAvalanche Rated(IXFP...M) OUTLINESymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VGVDGR TJ = 25C to 150C, RGS = 1M 1000 VIsolated Tab

 8.1. Size:164K  ixys
ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf

IXFP5N100PM
IXFP5N100PM

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFY5N50P3Power MOSFETs ID25 = 5AIXFA5N50P3 RDS(on) 1.65 IXFP5N50P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, R

 9.1. Size:313K  ixys
ixfa56n30x3 ixfp56n30x3 ixfh56n30x3.pdf

IXFP5N100PM
IXFP5N100PM

Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 300VIXFA56N30X3Power MOSFET ID25 = 56AIXFP56N30X3 RDS(on) 27m IXFH56N30X3N-Channel Enhancement ModeTO-263 (IXFA)Avalanche RatedGSD (Tab)TO-220 (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300

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History: IRFU220N | SVS65R280FD4 | 2N7268U | 2N7272R | WMK048NV6HG4 | SVSP11N60KD2

 

 
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