All MOSFET. IXFP4N60P3 Datasheet

 

IXFP4N60P3 Datasheet and Replacement


   Type Designator: IXFP4N60P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-220AB
 

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IXFP4N60P3 Datasheet (PDF)

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IXFP4N60P3

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFY4N60P3Power MOSFETs ID25 = 4AIXFA4N60P3 RDS(on) 2.2 IXFP4N60P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, RG

Datasheet: IXFQ30N60X , IXFQ26N50P3 , IXFQ24N60X , IXFQ20N50P3 , IXFP8N50P3 , IXFP7N60P3 , IXFP5N50P3 , IXFP5N100PM , IRF1404 , IXFP36N30P3 , IXFP30N60X , IXFP26N50P3 , IXFP24N60X , IXFP22N65X2 , IXFP20N50P3M , IXFP20N50P3 , IXFP18N60X .

History: NCEP40P30K | NCEP070N10AGU | IXTP130N10T

Keywords - IXFP4N60P3 MOSFET datasheet

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