IXFP16N50P3 Datasheet. Specs and Replacement

Type Designator: IXFP16N50P3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 330 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 193 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO-220AB

  📄📄 Copy 

IXFP16N50P3 substitution

- MOSFET ⓘ Cross-Reference Search

 

IXFP16N50P3 datasheet

 ..1. Size:173K  ixys
ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf pdf_icon

IXFP16N50P3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 RDS(on) 360m IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 15... See More ⇒

 4.1. Size:252K  ixys
ixfa16n50p ixfh16n50p ixfp16n50p.pdf pdf_icon

IXFP16N50P3

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) 400 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V ... See More ⇒

 7.1. Size:166K  ixys
ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf pdf_icon

IXFP16N50P3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 RDS(on) 440m IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15... See More ⇒

 9.1. Size:278K  ixys
ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf pdf_icon

IXFP16N50P3

X2-Class HiPERFET VDSS = 650V IXFA12N65X2 Power MOSFET ID25 = 12A IXFP12N65X2 RDS(on) 310m IXFH12N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Tr... See More ⇒

Detailed specifications: IXFP30N60X, IXFP26N50P3, IXFP24N60X, IXFP22N65X2, IXFP20N50P3M, IXFP20N50P3, IXFP18N60X, IXFP16N60P3, IRFB4115, IXFP14N60P3, IXFN94N50P2, IXFN55N50F, IXFN40N110Q3, IXFN260N17T, IXFN210N30P3, IXFN200N06, IXFL210N30P3

Keywords - IXFP16N50P3 MOSFET specs

 IXFP16N50P3 cross reference

 IXFP16N50P3 equivalent finder

 IXFP16N50P3 pdf lookup

 IXFP16N50P3 substitution

 IXFP16N50P3 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs