IXFN210N30P3 MOSFET PDF: N-Ch, 300V, 192A. Datasheet. Full specification with pinout and replacement list

IXFN210N30P3 Specs and Replacement

   Type Designator: IXFN210N30P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 192 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 2550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: SOT-227B

IXFN210N30P3 substitution

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IXFN210N30P3 datasheet

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