IXFL210N30P3 PDF and Equivalents Search

 

IXFL210N30P3 Specs and Replacement

Type Designator: IXFL210N30P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 108 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 268 nC

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 2550 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: ISOPLUS264

IXFL210N30P3 substitution

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IXFL210N30P3 datasheet

 ..1. Size:148K  ixys
 ixfl210n30p3.pdf pdf_icon

IXFL210N30P3

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFL210N30P3 Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab) trr 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS264 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to ... See More ⇒

Detailed specifications: IXFP16N50P3 , IXFP14N60P3 , IXFN94N50P2 , IXFN55N50F , IXFN40N110Q3 , IXFN260N17T , IXFN210N30P3 , IXFN200N06 , AON7408 , IXFL132N50P3 , IXFK90N60X , IXFK32N90P , IXFK30N50Q , IXFK260N17T , IXFK24N100Q3 , IXFK210N17T , IXFK150N30P3 .

Keywords - IXFL210N30P3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
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