All MOSFET. IXFL210N30P3 Datasheet

 

IXFL210N30P3 Datasheet and Replacement


   Type Designator: IXFL210N30P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 108 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 268 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 2550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: ISOPLUS264
 

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IXFL210N30P3 Datasheet (PDF)

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IXFL210N30P3

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFL210N30P3Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab)trr 250nsN-Channel Enhancement ModeAvalanche RatedISOPLUS264Fast Intrinsic RectifierSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to

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History: 2SK2025-01

Keywords - IXFL210N30P3 MOSFET datasheet

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