All MOSFET. IXFK32N90P Datasheet

 

IXFK32N90P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFK32N90P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 960 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 6.5 V

Maximum Drain Current |Id|: 32 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 215 nC

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 750 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO-264

IXFK32N90P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFK32N90P Datasheet (PDF)

1.1. ixfk32n90p ixfx32n90p.pdf Size:124K _ixys

IXFK32N90P
IXFK32N90P

Advance Technical Information PolarTM HiPerFETTM VDSS = 900V IXFK32N90P Power MOSFETs ID25 = 32A IXFX32N90P Ω RDS(on) < 300mΩ Ω Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25°C to 150°C 900 V S VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V Tab VGSS Continuous ±30 V VGSM Tr

3.1. ixfk32n80p ixfx32n80p.pdf Size:161K _ixys

IXFK32N90P
IXFK32N90P

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET ? ? RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V VGSS Continuous 30 V VGSM Transient 40 V G D

3.2. ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf Size:192K _ixys

IXFK32N90P
IXFK32N90P

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18? 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25? 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25C to 150C 600 600 V G VDGR TJ = 25C to 150C; RGS = 1 M? 600 600

 3.3. ixfk32n50q ixfx32n50q.pdf Size:573K _ixys

IXFK32N90P
IXFK32N90P

VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q Ω 500 V 32 A 0.16 Ω Ω Ω Power MOSFETs Ω Ω 500 V 32 A 0.16 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
Back to Top