All MOSFET. IXFK120N30P3 Datasheet

 

IXFK120N30P3 Datasheet and Replacement


   Type Designator: IXFK120N30P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1406 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO-264
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IXFK120N30P3 Datasheet (PDF)

 ..1. Size:131K  ixys
 ixfk120n30p3 ixfx120n30p3.pdf pdf_icon

IXFK120N30P3

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFK120N30P3Power MOSFETs ID25 = 120AIXFX120N30P3 RDS(on) 27m trr 250nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 300 V TabVDGR TJ = 25C to 150

 4.1. Size:139K  ixys
 ixfk120n30t ixfx120n30t.pdf pdf_icon

IXFK120N30P3

Advance Technical InformationGigaMOSTM VDSS = 300VIXFK120N30TID25 = 120APower MOSFETIXFX120N30T RDS(on) 24m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGDVDGR TJ = 25C to 150C, RGS = 1M

 6.1. Size:395K  ixys
 ixfk110n20 ixfk120n20 ixfn110n20 ixfn120n20.pdf pdf_icon

IXFK120N30P3

This datasheet has been downloaded from http://www.digchip.com at this page

 6.2. Size:159K  ixys
 ixfk120n65x2 ixfx120n65x2.pdf pdf_icon

IXFK120N30P3

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFK120N65X2Power MOSFET ID25 = 120AIXFX120N65X2 RDS(on) 24m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264P (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS

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