All MOSFET. IXFJ26N50P3 Datasheet

 

IXFJ26N50P3 Datasheet and Replacement


   Type Designator: IXFJ26N50P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 42 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO-247
 

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IXFJ26N50P3 Datasheet (PDF)

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IXFJ26N50P3

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFJ26N50P3ID25 = 14APower MOSFET RDS(on) 265m (Electrically Isolated Tab)N-Channel Enhancement ModeISO TO-247TMAvalanche RatedE153432Fast Intrinsic RectifierSymbol Test Conditions Maximum Ratings GDIsolated TabSVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C

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