IXFJ26N50P3 PDF and Equivalents Search

 

IXFJ26N50P3 Specs and Replacement

Type Designator: IXFJ26N50P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 280 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm

Package: TO-247

IXFJ26N50P3 substitution

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IXFJ26N50P3 datasheet

 ..1. Size:146K  ixys
 ixfj26n50p3.pdf pdf_icon

IXFJ26N50P3

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFJ26N50P3 ID25 = 14A Power MOSFET RDS(on) 265m (Electrically Isolated Tab) N-Channel Enhancement Mode ISO TO-247TM Avalanche Rated E153432 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings G D Isolated Tab S VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C ... See More ⇒

Detailed specifications: IXFK30N50Q , IXFK260N17T , IXFK24N100Q3 , IXFK210N17T , IXFK150N30P3 , IXFK120N65X2 , IXFK120N30P3 , IXFK100N65X2 , SKD502T , IXFI7N80P , IXFH94N30T , IXFH94N30P3 , IXFH80N65X2 , IXFH7N100P , IXFH76N15T2 , IXFH70N30Q3 , IXFH60N65X2 .

Keywords - IXFJ26N50P3 MOSFET specs

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