All MOSFET. IXFH34N50P3 Datasheet

 

IXFH34N50P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH34N50P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 695 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO-247

 IXFH34N50P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH34N50P3 Datasheet (PDF)

 ..1. Size:129K  ixys
ixfh34n50p3 ixfq34n50p3.pdf

IXFH34N50P3 IXFH34N50P3

Preliminary Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFQ34N50P3ID25 = 34APower MOSFETsIXFH34N50P3 RDS(on) 170m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-3P (IXFQ)GDSymbol Test Conditions Maximum RatingsSTabVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VTO-247

 7.1. Size:282K  ixys
ixfp34n65x2 ixfh34n65x2.pdf

IXFH34N50P3 IXFH34N50P3

X2-Class HiPerFETTM VDSS = 650VIXFP34N65X2Power MOSFET ID25 = 34AIXFH34N65X2 RDS(on) 100m N-Channel Enhancement ModeAvalanche RatedTO-220(IXFP)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 150C 650 VSD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 650 VTO-247VGSS Continuous 30 V(IXFH)VGSM Transien

 7.2. Size:205K  ixys
ixfa34n65x2 ixfp34n65x2 ixfh34n65x2.pdf

IXFH34N50P3 IXFH34N50P3

X2-Class HiPerFETTM VDSS = 650VIXFA34N65X2Power MOSFET ID25 = 34AIXFP34N65X2 RDS(on) 100m IXFH34N65X2N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGS

 7.3. Size:212K  inchange semiconductor
ixfh34n65x2.pdf

IXFH34N50P3 IXFH34N50P3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFH34N65X2FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: OSG65R041HZF

 

 
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