IXFH34N50P3 - аналоги, параметры транзистора - Справочник транзисторов

IXFH34N50P3 даташит

..1. Size:129K ixys
ixfh34n50p3 ixfq34n50p3.pdf pdf_icon

Preliminary Technical Information Polar3TM HiperFETTM VDSS = 500V IXFQ34N50P3 ID25 = 34A Power MOSFETs IXFH34N50P3 RDS(on) 170m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V TO-247

7.1. Size:282K ixys
ixfp34n65x2 ixfh34n65x2.pdf pdf_icon

X2-Class HiPerFETTM VDSS = 650V IXFP34N65X2 Power MOSFET ID25 = 34A IXFH34N65X2 RDS(on) 100m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 650 V S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXFH) VGSM Transien

7.2. Size:205K ixys
ixfa34n65x2 ixfp34n65x2 ixfh34n65x2.pdf pdf_icon

X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2 RDS(on) 100m IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGS

7.3. Size:212K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH34N65X2 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

Другие MOSFET... IXFH70N30Q3 , IXFH60N65X2 , IXFH60N60X , IXFH50N60X , IXFH46N65X2 , IXFH46N30T , IXFH44N50Q3 , IXFH34N65X2 , TK10A60D , IXFH30N60X , IXFH30N50Q , IXFH26N50P3 , IXFH24N60X , IXFH22N65X2 , IXFH20N50P3 , IXFH18N60X , IXFH18N100Q3 .