All MOSFET. IRFP343 Datasheet

 

IRFP343 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP343

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 350 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO3P

IRFP343 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFP343 Datasheet (PDF)

1.1. irfp343r.pdf Size:62K _upd-mosfet

IRFP343
IRFP343

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP343R FEATURES ·Drain Current –ID= 8.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.80Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

4.1. irfp3415pbf.pdf Size:161K _upd-mosfet

IRFP343
IRFP343

PD - 95512 IRFP3415PbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 150V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.042Ω G l Lead-Free ID = 43A S Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi

4.2. irfp340r.pdf Size:62K _upd-mosfet

IRFP343
IRFP343

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

 4.3. irfp341r.pdf Size:62K _upd-mosfet

IRFP343
IRFP343

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP341R FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

4.4. irfp342r.pdf Size:62K _upd-mosfet

IRFP343
IRFP343

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP342R FEATURES ·Drain Current –ID= 8.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.80Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

 4.5. irfp340pbf.pdf Size:1554K _upd-mosfet

IRFP343
IRFP343

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.55 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT • Fast Switching Qgs (nC) 10 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Compliant

4.6. irfp344pbf.pdf Size:2010K _upd-mosfet

IRFP343
IRFP343

IRFP344, SiHFP344 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 450 • Repetitive Avalanche Rated RoHS RDS(on) (Ω)VGS = 10 V 0.63 COMPLIANT • Isolated Central Mounting Hole Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 12 • Ease of Paralleling Qgd (nC) 41 • Simple Drive Requirements Configuration Single • Lead (Pb)-free D

4.7. irfp340pbf.pdf Size:1801K _international_rectifier

IRFP343
IRFP343

PD- 95712 IRFP340PbF Lead-Free 8/2/04 Document Number: 91222 www.vishay.com 1 IRFP340PbF Document Number: 91222 www.vishay.com 2 IRFP340PbF Document Number: 91222 www.vishay.com 3 IRFP340PbF Document Number: 91222 www.vishay.com 4 IRFP340PbF Document Number: 91222 www.vishay.com 5 IRFP340PbF Document Number: 91222 www.vishay.com 6 IRFP340PbF Peak Diode Recovery dv/dt

4.8. irfp344pbf.pdf Size:1774K _international_rectifier

IRFP343
IRFP343

PD- 95713 IRFP344PbF Lead-Free 8/2/04 Document Number: 91223 www.vishay.com 1 IRFP344PbF Document Number: 91223 www.vishay.com 2 IRFP344PbF Document Number: 91223 www.vishay.com 3 IRFP344PbF Document Number: 91223 www.vishay.com 4 IRFP344PbF Document Number: 91223 www.vishay.com 5 IRFP344PbF Document Number: 91223 www.vishay.com 6 IRFP344PbF Document Number: 91223 www

4.9. irfp340.pdf Size:172K _international_rectifier

IRFP343
IRFP343

4.10. irfp344.pdf Size:202K _international_rectifier

IRFP343
IRFP343

4.11. irfp3415.pdf Size:92K _international_rectifier

IRFP343
IRFP343

PD - 93962 IRFP3415 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175C Operating Temperature Fast Switching RDS(on) = 0.042? Fully Avalanche Rated G Description ID = 43A S Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi

4.12. irfp340-343 irf740-743.pdf Size:191K _samsung

IRFP343
IRFP343



4.13. irfp340a.pdf Size:933K _samsung

IRFP343
IRFP343

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

4.14. irfp340 sihfp340.pdf Size:1548K _vishay

IRFP343
IRFP343

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive

Datasheet: IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , STF5N52U , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 .

 
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