All MOSFET. IRFP350A Datasheet

 

IRFP350A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP350A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 202 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 2140 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO3P

IRFP350A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP350A Datasheet (PDF)

0.1. irfp350a.pdf Size:232K _fairchild_semi

IRFP350A
IRFP350A

IRFP350A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology RDS(on) = 0.3Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

0.2. irfp350a.pdf Size:985K _samsung

IRFP350A
IRFP350A

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology Ω RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 0.3. irfp350a.pdf Size:237K _inchange_semiconductor

IRFP350A
IRFP350A

isc N-Channel MOSFET Transistor IRFP350A FEATURES ·Drain Current –I = 17A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.3Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 

 
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