All MOSFET. IPW60R280P6 Datasheet

 

IPW60R280P6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPW60R280P6
   Marking Code: 6R280P6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 13.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-247

 IPW60R280P6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPW60R280P6 Datasheet (PDF)

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