IPU80R1K4CE MOSFET Datasheet: N-Ch, 800V, 3.9A. Full specification with pinout and replacement list

IPU80R1K4CE Specs and Replacement

Type Designator: IPU80R1K4CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 25 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-251

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