IPU50R2K0CE Specs and Replacement

Type Designator: IPU50R2K0CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-251

IPU50R2K0CE substitution

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IPU50R2K0CE datasheet

 ..1. Size:2508K  infineon
ipd50r2k0ce ipu50r2k0ce.pdf pdf_icon

IPU50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R2K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R2K0CE, IPU50R2K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

 ..2. Size:260K  inchange semiconductor
ipu50r2k0ce.pdf pdf_icon

IPU50R2K0CE

isc N-Channel MOSFET Transistor IPU50R2K0CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

 8.1. Size:1624K  1
ipd50r1k4ce ipu50r1k4ce 50s1k4ce.pdf pdf_icon

IPU50R2K0CE

IPD50R1K4CE, IPU50R1K4CE MOSFET DPAK IPAK 500V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer an... See More ⇒

 8.2. Size:2499K  infineon
ipd50r950ce ipu50r950ce.pdf pdf_icon

IPU50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R950CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R950CE, IPU50R950CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

Detailed specifications: IPU60R600C6, IPU60R2K1CE, IPU60R2K0C6, IPU60R1K5CE, IPU60R1K4C6, IPU60R1K0CE, IPU50R950CE, IPU50R3K0CE, 12N60, IPU50R1K4CE, IPU13N03LAG, IPU06N03LAG, IPT059N15N3, IPT020N10N3, IPT015N10N5, IPT012N08N5, IPT007N06N

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