All MOSFET. IPU50R2K0CE Datasheet

 

IPU50R2K0CE Datasheet and Replacement


   Type Designator: IPU50R2K0CE
   Marking Code: 5R2K0CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-251
 

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IPU50R2K0CE Datasheet (PDF)

 ..1. Size:2508K  infineon
 ipd50r2k0ce ipu50r2k0ce.pdf pdf_icon

IPU50R2K0CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R2K0CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R2K0CE, IPU50R2K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 ..2. Size:260K  inchange semiconductor
 ipu50r2k0ce.pdf pdf_icon

IPU50R2K0CE

isc N-Channel MOSFET Transistor IPU50R2K0CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.1. Size:1624K  1
 ipd50r1k4ce ipu50r1k4ce 50s1k4ce.pdf pdf_icon

IPU50R2K0CE

IPD50R1K4CE, IPU50R1K4CEMOSFETDPAK IPAK500V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 11233price-performance optimized platform enabling to target cost sensitiveapplications in Consumer an

 8.2. Size:2499K  infineon
 ipd50r950ce ipu50r950ce.pdf pdf_icon

IPU50R2K0CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R950CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R950CE, IPU50R950CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - IPU50R2K0CE MOSFET datasheet

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