IPU13N03LAG
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPU13N03LAG
Marking Code: 13N03LA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 46
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 4.6
nS
Cossⓘ -
Output Capacitance: 303
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0128
Ohm
Package:
TO-251
IPU13N03LAG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPU13N03LAG
Datasheet (PDF)
..1. Size:545K infineon
ipd13n03lag ipf13n03lag ipu13n03lag.pdf
IPD13N03LA G IPF13N03LA GIPS13N03LA G IPU13N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR 12.8mDS(on),max Qualified according to JEDEC1) for target applicationsI 30 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C opera
9.1. Size:597K infineon
ipu135n08n31.pdf
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9.2. Size:537K infineon
ipd135n03l ipf135n03l ips135n03l ipu135n03l.pdf
Type IPD135N03L G IPF135N03L GIPS135N03L G IPU135N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 13.5mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very
9.4. Size:260K inchange semiconductor
ipu135n03l.pdf
isc N-Channel MOSFET Transistor IPU135N03LFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
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