All MOSFET. IRFP352 Datasheet

 

IRFP352 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP352

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 73 nC

Rise Time (tr): 65(max) nS

Drain-Source Capacitance (Cd): 390 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO3P

IRFP352 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP352 Datasheet (PDF)

0.1. irfp350 irfp351 irfp352 irfp353.pdf Size:220K _samsung

IRFP352
IRFP352

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

0.2. irfp352.pdf Size:236K _inchange_semiconductor

IRFP352
IRFP352

isc N-Channel MOSFET Transistor IRFP352FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a

 0.3. irfp352r.pdf Size:162K _inchange_semiconductor

IRFP352
IRFP352

INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP352(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS

Datasheet: IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , 2N4416 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 .

 

 
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