All MOSFET. IPT012N08N5 Datasheet

 

IPT012N08N5 Datasheet and Replacement


   Type Designator: IPT012N08N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: HSOF-8-1
 

 IPT012N08N5 substitution

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IPT012N08N5 Datasheet (PDF)

 ..1. Size:1178K  infineon
ipt012n08n5.pdf pdf_icon

IPT012N08N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 80 VIPT012N08N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 80 VIPT012N08N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

 6.1. Size:634K  infineon
ipt012n06n.pdf pdf_icon

IPT012N08N5

IPT012N06NMOSFETHSOFOptiMOSTM Power-Transistor, 60 VFeaturesTab 100% avalanche tested Superior thermal resistance N-channel1 Qualified according to JEDEC1) for target applications 2345 Pb-free lead plating; RoHS compliant678 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial Applica

 9.1. Size:1186K  infineon
ipt015n10n5.pdf pdf_icon

IPT012N08N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

 9.2. Size:674K  infineon
ipt019n08n5.pdf pdf_icon

IPT012N08N5

IPT019N08N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 80 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product vali

Datasheet: IPU50R3K0CE , IPU50R2K0CE , IPU50R1K4CE , IPU13N03LAG , IPU06N03LAG , IPT059N15N3 , IPT020N10N3 , IPT015N10N5 , IRFP450 , IPT007N06N , IPT004N03L , IPS65R950C6 , IPS65R1K5CE , IPS65R1K4C6 , IPS65R1K0CE , IPS090N03L , IPS075N03L .

History: IRFR12N25DPBF | STHV82 | FDG1024NZ

Keywords - IPT012N08N5 MOSFET datasheet

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