All MOSFET. IPT004N03L Datasheet

 

IPT004N03L Datasheet and Replacement


   Type Designator: IPT004N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 5400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0004 Ohm
   Package: HSOF-8-1
 

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IPT004N03L Datasheet (PDF)

 ..1. Size:1208K  infineon
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IPT004N03L

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 30 VIPT004N03LData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 30 VIPT004N03LHSOF1 DescriptionFeaturesTab Optimized for e-fuse and ORing application Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested1 Superior th

 9.1. Size:1194K  infineon
 ipt007n06n.pdf pdf_icon

IPT004N03L

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPT007N06NData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPT007N06NHSOF1 DescriptionFeaturesTab 100% avalanche tested Superior thermal resistance N-channel1 Qualified according to JEDEC 1) for target applications

Datasheet: IPU50R1K4CE , IPU13N03LAG , IPU06N03LAG , IPT059N15N3 , IPT020N10N3 , IPT015N10N5 , IPT012N08N5 , IPT007N06N , 20N50 , IPS65R950C6 , IPS65R1K5CE , IPS65R1K4C6 , IPS65R1K0CE , IPS090N03L , IPS075N03L , IPS060N03L , IPS050N03L .

History: IRFB7545

Keywords - IPT004N03L MOSFET datasheet

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