All MOSFET. IPS090N03L Datasheet

 

IPS090N03L Datasheet and Replacement


   Type Designator: IPS090N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-251
 

 IPS090N03L substitution

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IPS090N03L Datasheet (PDF)

 ..1. Size:1344K  infineon
 ips090n03l.pdf pdf_icon

IPS090N03L

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 0.1. Size:538K  1
 ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf pdf_icon

IPS090N03L

Type IPD090N03L G IPF090N03L GIPS090N03L G IPU090N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 9mDS(on),max Optimized technology for DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

 9.1. Size:413K  infineon
 ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf pdf_icon

IPS090N03L

IPD09N03LA IPF09N03LAIPS09N03LA IPU09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.6mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C

Datasheet: IPT015N10N5 , IPT012N08N5 , IPT007N06N , IPT004N03L , IPS65R950C6 , IPS65R1K5CE , IPS65R1K4C6 , IPS65R1K0CE , 4N60 , IPS075N03L , IPS060N03L , IPS050N03L , IPS040N03L , IPS031N03L , IPP65R660CFDA , IPP65R420CFD , IPP65R310CFDA .

Keywords - IPS090N03L MOSFET datasheet

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