IPS090N03L Specs and Replacement

Type Designator: IPS090N03L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-251

IPS090N03L substitution

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IPS090N03L datasheet

 ..1. Size:1344K  infineon
ips090n03l.pdf pdf_icon

IPS090N03L

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 0.1. Size:538K  1
ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf pdf_icon

IPS090N03L

Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 9 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low... See More ⇒

 9.1. Size:413K  infineon
ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf pdf_icon

IPS090N03L

IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.6 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C ... See More ⇒

Detailed specifications: IPT015N10N5, IPT012N08N5, IPT007N06N, IPT004N03L, IPS65R950C6, IPS65R1K5CE, IPS65R1K4C6, IPS65R1K0CE, 4N60, IPS075N03L, IPS060N03L, IPS050N03L, IPS040N03L, IPS031N03L, IPP65R660CFDA, IPP65R420CFD, IPP65R310CFDA

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.