All MOSFET. IPS090N03L Datasheet

 

IPS090N03L MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPS090N03L
   Marking Code: 090N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-251

 IPS090N03L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPS090N03L Datasheet (PDF)

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 ips090n03l.pdf

IPS090N03L IPS090N03L

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 0.1. Size:538K  1
 ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf

IPS090N03L IPS090N03L

Type IPD090N03L G IPF090N03L GIPS090N03L G IPU090N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 9mDS(on),max Optimized technology for DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

 9.1. Size:413K  infineon
 ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf

IPS090N03L IPS090N03L

IPD09N03LA IPF09N03LAIPS09N03LA IPU09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.6mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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