IPS090N03L Specs and Replacement
Type Designator: IPS090N03L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-251
IPS090N03L substitution
- MOSFET ⓘ Cross-Reference Search
IPS090N03L datasheet
ips090n03l.pdf
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ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf
Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 9 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low... See More ⇒
ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf
IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.6 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C ... See More ⇒
Detailed specifications: IPT015N10N5, IPT012N08N5, IPT007N06N, IPT004N03L, IPS65R950C6, IPS65R1K5CE, IPS65R1K4C6, IPS65R1K0CE, 4N60, IPS075N03L, IPS060N03L, IPS050N03L, IPS040N03L, IPS031N03L, IPP65R660CFDA, IPP65R420CFD, IPP65R310CFDA
Keywords - IPS090N03L MOSFET specs
IPS090N03L cross reference
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IPS090N03L replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AP6680SGYT-HF
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