All MOSFET. IPS060N03L Datasheet

 

IPS060N03L Datasheet and Replacement


   Type Designator: IPS060N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-251
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IPS060N03L Datasheet (PDF)

 ..1. Size:1017K  infineon
 ips060n03l.pdf pdf_icon

IPS060N03L

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 ..2. Size:634K  infineon
 ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf pdf_icon

IPS060N03L

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

 0.1. Size:523K  infineon
 ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf pdf_icon

IPS060N03L

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very lo

 9.1. Size:420K  infineon
 ipd06n03la ipf06n03la ips06n03la ipu06n03la.pdf pdf_icon

IPS060N03L

IPD06N03LA IPF06N03LAIPS06N03LA IPU06N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C

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History: MCH3484 | DMN30H4D0L

Keywords - IPS060N03L MOSFET datasheet

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