IPP65R225C7 MOSFET Datasheet: N-Ch, 650V, 11A. Full specification with pinout and replacement list

IPP65R225C7 Specs and Replacement

Type Designator: IPP65R225C7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm

Package: TO-220

IPP65R225C7 substitution

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IPP65R225C7 datasheet

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPP65R225C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPP65R225C7 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

..2. Size:245K inchange semiconductor
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isc N-Channel MOSFET Transistor IPP65R225C7 IIPP65R225C7 FEATURES Static drain-source on-resistance RDS(on) 0.225 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOSFET offering better efficiency,re... See More ⇒

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MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/... See More ⇒