IPP09N03LA
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP09N03LA
Marking Code: 09N03LA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 63
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 88
nS
Cossⓘ -
Output Capacitance: 530
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0089
Ohm
Package:
TO-220
IPP09N03LA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP09N03LA
Datasheet (PDF)
..1. Size:311K infineon
ipb09n03la ipi09n03la ipp09n03la.pdf 
IPB09N03LAIPI09N03LA, IPP09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.9m DS(on),max N-channelI 50 AD Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1
9.1. Size:687K infineon
ipb090n06n3g ipp093n06n3g.pdf
pe IPB090N06N3 G IPP093N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&),R m , ?> =1G ,& P G35
9.2. Size:614K infineon
ipp096n03l.pdf
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9.3. Size:617K infineon
ipp096n03l .pdf
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9.4. Size:295K infineon
ipb090n06n3 ipp093n06n3.pdf
Type IPB090N06N3 G IPP093N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS for sync. rectification, drives and dc/dc SMPSR 9mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 50 AD Very low on-resistance RDS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications
9.5. Size:636K infineon
ipb096n03lg ipp096n03lg.pdf
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9.6. Size:687K infineon
ipp093n06n3 ipb093n06n3.pdf
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9.7. Size:245K inchange semiconductor
ipp093n06n3.pdf
isc N-Channel MOSFET Transistor IPP093N06N3IIPP093N06N3FEATURESStatic drain-source on-resistance:RDS(on) 9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)
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