IPP052N08N5 PDF and Equivalents Search

 ..1. Size:1809K  infineon
 ipp052n08n5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPP052N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPP052N08N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis... See More ⇒

 ..2. Size:245K  inchange semiconductor
 ipp052n08n5.pdf

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 6.1. Size:683K  infineon
 ipb049n06l3g ipp052n06l3g ipp052n06l3 ipb049n06l3 ipp052n06l3 ipb052n06l3.pdf

pe IPB049N06L3 G IPP052N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E ... See More ⇒

 6.2. Size:1847K  cn vbsemi
 ipp052n06l3.pdf

IPP052N06L3 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0090 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2002... See More ⇒

 6.3. Size:245K  inchange semiconductor
 ipp052n06l3.pdf

isc N-Channel MOSFET Transistor IPP052N06L3,IIPP052N06L3 FEATURES Static drain-source on-resistance RDS(on) 4.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching for SMPS Optimized technology for DC/DC converters ABSOLUTE MAXIMUM RATINGS(... See More ⇒