All MOSFET. IRFP432 Datasheet

 

IRFP432 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP432

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO3P

IRFP432 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP432 Datasheet (PDF)

1.1. irfp4321pbf.pdf Size:291K _upd-mosfet

IRFP432 IRFP432

PD - 97106 IRFP4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m: RDS(on) typ. Benefits max. 15.5m: l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

1.2. irfp4321pbf.pdf Size:291K _international_rectifier

IRFP432 IRFP432

PD - 97106 IRFP4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m: RDS(on) typ. Benefits max. 15.5m: l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

 1.3. irfp4321.pdf Size:243K _inchange_semiconductor

IRFP432 IRFP432

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4321，IIRFP4321 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤15.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Motion Control Applications ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible

Datasheet: IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , CEP83A3 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 .

 

 
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