IRFP432 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP432
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 21 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 86 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: TO3P
IRFP432 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP432 Datasheet (PDF)
irfp4321pbf.pdf
PD - 97106IRFP4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power Supplyl Hard Switched and High Frequency Circuits 12m:RDS(on) typ.Benefitsmax. 15.5m:l Low RDSON Reduces LossesID 78Al Low Gate Charge Improves the Switching PerformanceDl Improved Diode Recovery
irfp4321pbf.pdf
PD - 97106IRFP4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power Supplyl Hard Switched and High Frequency Circuits 12m:RDS(on) typ.Benefitsmax. 15.5m:l Low RDSON Reduces LossesID 78Al Low Gate Charge Improves the Switching PerformanceDl Improved Diode Recovery
irfp4321.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4321IIRFP4321FEATURESStatic drain-source on-resistance:RDS(on)15.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONMotion Control ApplicationsHigh Efficiency Synchronous Rectification in SMPSUninterruptible
Datasheet: IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRF2807 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 .
