All MOSFET. IRFP342R Datasheet

 

IRFP342R Datasheet and Replacement


   Type Designator: IRFP342R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO3PN
 

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IRFP342R Datasheet (PDF)

 ..1. Size:62K  inchange semiconductor
irfp342r.pdf pdf_icon

IRFP342R

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP342R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.80(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

 8.1. Size:202K  international rectifier
irfp344.pdf pdf_icon

IRFP342R

 8.2. Size:161K  international rectifier
irfp3415pbf.pdf pdf_icon

IRFP342R

PD - 95512IRFP3415PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 0.042Gl Lead-FreeID = 43ASDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resi

Datasheet: IPP027N08N5 , IPP023N10N5 , IPP023N08N5 , IPP020N08N5 , IPP020N06N , IRFP340R , IRFP3415PBF , IRFP341R , IRF4905 , IRFP343R , IRFP344PBF , IRFP350CF , IRFP350LCPBF , IRFP350PBF , IRFP350R , IRFP351R , IRFP352R .

History: FQPF14N30 | RJ1G12BGN

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