IRFP342R Datasheet. Specs and Replacement

Type Designator: IRFP342R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO3PN

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IRFP342R datasheet

 ..1. Size:62K  inchange semiconductor
irfp342r.pdf pdf_icon

IRFP342R

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP342R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- VDSS= 400V(Min) Static Drain-Source On-Resistance RDS(on) = 0.80 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA... See More ⇒

 8.1. Size:202K  international rectifier
irfp344.pdf pdf_icon

IRFP342R

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 8.2. Size:161K  international rectifier
irfp3415pbf.pdf pdf_icon

IRFP342R

PD - 95512 IRFP3415PbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 150V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.042 G l Lead-Free ID = 43A S Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi... See More ⇒

Detailed specifications: IPP027N08N5, IPP023N10N5, IPP023N08N5, IPP020N08N5, IPP020N06N, IRFP340R, IRFP3415PBF, IRFP341R, IRFP064N, IRFP343R, IRFP344PBF, IRFP350CF, IRFP350LCPBF, IRFP350PBF, IRFP350R, IRFP351R, IRFP352R

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