IRFP362 Specs and Replacement
Type Designator: IRFP362
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 94 nS
Cossⓘ - Output Capacitance: 550 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO247
IRFP362 substitution
- MOSFET ⓘ Cross-Reference Search
IRFP362 datasheet
irfp360.pdf
Document Number 90292 www.vishay.com 1001 www.vishay.com Document Number 90292 1002 Document Number 90292 www.vishay.com 1003 Document Number 90292 www.vishay.com 1004 Document Number 90292 www.vishay.com 1005 Document Number 90292 www.vishay.com 1006 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc.,... See More ⇒
irfp360lc.pdf
PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 400V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.20 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional... See More ⇒
irfp360lc sihfp360lc.pdf
IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 Isolated Central Mounting Hole Qgs (nC) 28 Dynamic dV/dt Rated Qgd (nC) 45 Repetitive A... See More ⇒
Detailed specifications: IRFP350LCPBF, IRFP350PBF, IRFP350R, IRFP351R, IRFP352R, IRFP353R, IRFP354PBF, IRFP360PBF, 5N65, IRFP3703PBF, IRFP3710PBF, IPL65R725CFD, IPL65R660E6, IPL65R650C6S, IPL65R460CFD, IPL65R420E6, IPL65R340CFD
Keywords - IRFP362 MOSFET specs
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