IRFP362 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP362
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 250 W
Предельно допустимое напряжение сток-исток |Uds|: 400 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 20 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 94 ns
Выходная емкость (Cd): 550 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.25 Ohm
Тип корпуса: TO247
IRFP362 Datasheet (PDF)
irfp360.pdf
Document Number: 90292 www.vishay.com1001www.vishay.comDocument Number: 902921002Document Number: 90292 www.vishay.com1003Document Number: 90292www.vishay.com1004Document Number: 90292www.vishay.com1005Document Number: 90292www.vishay.com1006Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc.,
irfp360lc.pdf
PD - 9.1230IRFP360LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 400VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.20Dynamic dv/dt RatedRepetitive Avalanche RatedID = 23ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irfp360lc sihfp360lc.pdf
IRFP360LC, SiHFP360LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 110 Isolated Central Mounting HoleQgs (nC) 28 Dynamic dV/dt RatedQgd (nC) 45 Repetitive A
irfp360pbf.pdf
IRFP360, SiHFP360Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Lead (
irfp360 sihfp360.pdf
IRFP360, SiHFP360Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30 Ease of ParallelingQgd (nC) 110Configuration Single Simple Drive Requirements Complia
irfp360 sihfp360.pdf
IRFP360, SiHFP360Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30 Ease of ParallelingQgd (nC) 110Configuration Single Simple Drive Requirements Complia
irfp360lc.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP360LCFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
irfp360pbf.pdf
isc N-Channel MOSFET Transistor IRFP360PBFFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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