IRFP3703PBF Specs and Replacement

Type Designator: IRFP3703PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 123 nS

Cossⓘ - Output Capacitance: 3060 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO247AC

IRFP3703PBF substitution

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IRFP3703PBF datasheet

 ..1. Size:214K  international rectifier
 irfp3703pbf.pdf pdf_icon

IRFP3703PBF

PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Synchronous Rectification 30V 0.0028 210A l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 1... See More ⇒

 6.1. Size:236K  international rectifier
 irfp3703.pdf pdf_icon

IRFP3703PBF

PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Synchronous Rectification 30V 0.0028 210A Active ORing Benefits Ultra Low On-Resistance Low Gate Impedance to Reduce Switching Losses Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100... See More ⇒

 6.2. Size:241K  inchange semiconductor
 irfp3703.pdf pdf_icon

IRFP3703PBF

isc N-Channel MOSFET Transistor IRFP3703 IIRFP3703 FEATURES Static drain-source on-resistance RDS(on) 2.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V ... See More ⇒

 8.1. Size:229K  international rectifier
 irfp3710pbf.pdf pdf_icon

IRFP3703PBF

PD - 95053A IRFP3710PbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025 G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili... See More ⇒

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Detailed specifications: IRFP350PBF, IRFP350R, IRFP351R, IRFP352R, IRFP353R, IRFP354PBF, IRFP360PBF, IRFP362, IRF1010E, IRFP3710PBF, IPL65R725CFD, IPL65R660E6, IPL65R650C6S, IPL65R460CFD, IPL65R420E6, IPL65R340CFD, IPL65R310E6

Keywords - IRFP3703PBF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.