All MOSFET. IRFP3703PBF Datasheet

 

IRFP3703PBF Datasheet and Replacement


   Type Designator: IRFP3703PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 123 nS
   Cossⓘ - Output Capacitance: 3060 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO247AC
 

 IRFP3703PBF substitution

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IRFP3703PBF Datasheet (PDF)

 ..1. Size:214K  international rectifier
irfp3703pbf.pdf pdf_icon

IRFP3703PBF

PD - 95481SMPS MOSFETIRFP3703PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Synchronous Rectification 30V 0.0028 210Al Active ORingl Lead-FreeBenefitsl Ultra Low On-Resistancel Low Gate Impedance to Reduce SwitchingLossesl Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 1

 6.1. Size:236K  international rectifier
irfp3703.pdf pdf_icon

IRFP3703PBF

PD - 93917AIRFP3703SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Synchronous Rectification 30V 0.0028 210A Active ORingBenefits Ultra Low On-Resistance Low Gate Impedance to Reduce SwitchingLosses Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100

 6.2. Size:241K  inchange semiconductor
irfp3703.pdf pdf_icon

IRFP3703PBF

isc N-Channel MOSFET Transistor IRFP3703IIRFP3703FEATURESStatic drain-source on-resistance:RDS(on)2.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 V

 8.1. Size:229K  international rectifier
irfp3710pbf.pdf pdf_icon

IRFP3703PBF

PD - 95053AIRFP3710PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.025Gl Lead-FreeDescription ID = 57ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per sili

Datasheet: IRFP350PBF , IRFP350R , IRFP351R , IRFP352R , IRFP353R , IRFP354PBF , IRFP360PBF , IRFP362 , IRF530 , IRFP3710PBF , IPL65R725CFD , IPL65R660E6 , IPL65R650C6S , IPL65R460CFD , IPL65R420E6 , IPL65R340CFD , IPL65R310E6 .

History: IXTP6N50P | IRLR4343 | SST65R280S2E | S2N7002K | WTK9410

Keywords - IRFP3703PBF MOSFET datasheet

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