IPL65R1K0C6S MOSFET. Datasheet pdf. Equivalent
Type Designator: IPL65R1K0C6S
Marking Code: 65C61K0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 4.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 23 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: THINPAK5X6
IPL65R1K0C6S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPL65R1K0C6S Datasheet (PDF)
ipl65r1k0c6s.pdf
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ipl65r1k5c6s.pdf
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ipl65r130c7.pdf
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ipl65r190e6.pdf
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CTU20N700 | WMM07N65C2 | WMN08N70C4 | WMM08N70C4
History: CTU20N700 | WMM07N65C2 | WMN08N70C4 | WMM08N70C4
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918