IPL65R1K0C6S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPL65R1K0C6S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 34.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5.2 ns
Cossⓘ - Выходная емкость: 23 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: THINPAK5X6
Аналог (замена) для IPL65R1K0C6S
IPL65R1K0C6S Datasheet (PDF)
ipl65r1k0c6s.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K0C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K0C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an
ipl65r1k5c6s.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K5C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K5C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an
ipl65r195c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R195C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R195C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and
ipl65r130c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R130C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R130C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and
Другие MOSFET... IPL65R650C6S , IPL65R460CFD , IPL65R420E6 , IPL65R340CFD , IPL65R310E6 , IPL65R230C7 , IPL65R210CFD , IPL65R1K5C6S , 10N65 , IPL65R195C7 , IPL65R190E6 , IPL65R165CFD , IPL65R130C7 , IPL65R099C7 , IPL65R070C7 , IPL60R650P6S , IPL60R360P6S .
History: IPB60R360P7 | FQB47P06TMAM002 | RU30100R
History: IPB60R360P7 | FQB47P06TMAM002 | RU30100R



Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
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