All MOSFET. IPL65R195C7 Datasheet

 

IPL65R195C7 Datasheet and Replacement


   Type Designator: IPL65R195C7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
   Package: THINPAK8X8
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IPL65R195C7 Datasheet (PDF)

 ..1. Size:1769K  infineon
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IPL65R195C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R195C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R195C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 6.1. Size:1600K  infineon
 ipl65r190e6.pdf pdf_icon

IPL65R195C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R190E6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R190E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

 7.1. Size:1322K  infineon
 ipl65r1k0c6s.pdf pdf_icon

IPL65R195C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K0C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K0C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

 7.2. Size:1337K  infineon
 ipl65r1k5c6s.pdf pdf_icon

IPL65R195C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K5C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K5C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AONR62818 | NCE65T2K4K | NCE60PD05S | P7004EM | AOSP21357 | SIHP16N50C | FDP5500

Keywords - IPL65R195C7 MOSFET datasheet

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