IPI80N06S3-07 Specs and Replacement
Type Designator: IPI80N06S3-07
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 1182 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-262
IPI80N06S3-07 substitution
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IPI80N06S3-07 datasheet
ipi80n06s3-07.pdf
IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 6.5 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche... See More ⇒
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf
IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l... See More ⇒
ipb80n06s2l-11 ipp80n06s2l-11 ipi80n06s2l-11 ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 10.7 mW DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra lo... See More ⇒
ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf
IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒
Detailed specifications: IPL65R070C7, IPL60R650P6S, IPL60R360P6S, IPL60R2K1C6S, IPL60R255P6, IPL60R210P6, IPL60R1K5C6S, IPL60R180P6, IRFZ24N, IPI65R420CFD, IPI65R310CFD, IPI65R280E6, IPI65R190E6, IPI65R190CFD, IPI65R190C6, IPI65R150CFD, IPI65R110CFD
Keywords - IPI80N06S3-07 MOSFET specs
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IPI80N06S3-07 replacement
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