All MOSFET. IPI80N06S3-07 Datasheet

 

IPI80N06S3-07 Datasheet and Replacement


   Type Designator: IPI80N06S3-07
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 1182 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-262
 

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IPI80N06S3-07 Datasheet (PDF)

 ..1. Size:187K  infineon
ipi80n06s3-07.pdf pdf_icon

IPI80N06S3-07

IPB80N06S3-07IPI80N06S3-07, IPP80N06S3-07OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 6.5mDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche

 5.1. Size:158K  infineon
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf pdf_icon

IPI80N06S3-07

IPB80N06S2L-05IPI80N06S2L-05, IPP80N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.5mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l

 5.2. Size:132K  infineon
ipb80n06s2l-11 ipp80n06s2l-11 ipi80n06s2l-11 ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf pdf_icon

IPI80N06S3-07

IPB80N06S2L-11IPP80N06S2L-11, IPI80N06S2L-11OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 10.7mWDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra lo

 5.3. Size:158K  infineon
ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf pdf_icon

IPI80N06S3-07

IPB80N06S2-08IPP80N06S2-08, IPI80N06S2-08OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

Datasheet: IPL65R070C7 , IPL60R650P6S , IPL60R360P6S , IPL60R2K1C6S , IPL60R255P6 , IPL60R210P6 , IPL60R1K5C6S , IPL60R180P6 , AON6380 , IPI65R420CFD , IPI65R310CFD , IPI65R280E6 , IPI65R190E6 , IPI65R190CFD , IPI65R190C6 , IPI65R150CFD , IPI65R110CFD .

Keywords - IPI80N06S3-07 MOSFET datasheet

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