IPI80N06S3-07 Specs and Replacement

Type Designator: IPI80N06S3-07

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 1182 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-262

IPI80N06S3-07 substitution

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IPI80N06S3-07 datasheet

 ..1. Size:187K  infineon
ipi80n06s3-07.pdf pdf_icon

IPI80N06S3-07

IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 6.5 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche... See More ⇒

 5.1. Size:158K  infineon
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf pdf_icon

IPI80N06S3-07

IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l... See More ⇒

 5.2. Size:132K  infineon
ipb80n06s2l-11 ipp80n06s2l-11 ipi80n06s2l-11 ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf pdf_icon

IPI80N06S3-07

IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 10.7 mW DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra lo... See More ⇒

 5.3. Size:158K  infineon
ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf pdf_icon

IPI80N06S3-07

IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

Detailed specifications: IPL65R070C7, IPL60R650P6S, IPL60R360P6S, IPL60R2K1C6S, IPL60R255P6, IPL60R210P6, IPL60R1K5C6S, IPL60R180P6, IRFZ24N, IPI65R420CFD, IPI65R310CFD, IPI65R280E6, IPI65R190E6, IPI65R190CFD, IPI65R190C6, IPI65R150CFD, IPI65R110CFD

Keywords - IPI80N06S3-07 MOSFET specs

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 IPI80N06S3-07 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs