All MOSFET. IPF135N03LG Datasheet

 

IPF135N03LG Datasheet and Replacement


   Type Designator: IPF135N03LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO-252
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IPF135N03LG Datasheet (PDF)

 ..1. Size:529K  infineon
 ipf135n03lg.pdf pdf_icon

IPF135N03LG

Type IPD135N03L G IPF135N03L GIPS135N03L G IPU135N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 13.5mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very

 ..2. Size:1397K  infineon
 ipd135n03lg ipf135n03lg ips135n03lg ipu135n03lg.pdf pdf_icon

IPF135N03LG

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 4.1. Size:537K  infineon
 ipd135n03l ipf135n03l ips135n03l ipu135n03l.pdf pdf_icon

IPF135N03LG

Type IPD135N03L G IPF135N03L GIPS135N03L G IPU135N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 13.5mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very

 9.1. Size:545K  infineon
 ipd13n03lag ipf13n03lag ipu13n03lag.pdf pdf_icon

IPF135N03LG

IPD13N03LA G IPF13N03LA GIPS13N03LA G IPU13N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR 12.8mDS(on),max Qualified according to JEDEC1) for target applicationsI 30 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C opera

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History: IRF7473 | 2SK1571

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