IPDH6N03LAG Specs and Replacement

Type Designator: IPDH6N03LAG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.4 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-252

IPDH6N03LAG substitution

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IPDH6N03LAG datasheet

 ..1. Size:534K  infineon
 ipdh6n03lag.pdf pdf_icon

IPDH6N03LAG

IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 6 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 17... See More ⇒

Detailed specifications: IPI084N06L3G, IPI04N03LA, IPI04CN10N, IPI029N06N, IPI020N06N, IPF13N03LAG, IPF135N03LG, IPF050N03LG, AO4407A, IPDH4N03LAG, IPD80R2K8CE, IPD80R1K4CE, IPD80R1K0CE, IPD65R950CFD, IPD65R950C6, IPD65R660CFDA, IPD65R420CFDA

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.