All MOSFET. IPDH6N03LAG Datasheet

 

IPDH6N03LAG Datasheet and Replacement


   Type Designator: IPDH6N03LAG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252
 

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IPDH6N03LAG Datasheet (PDF)

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IPDH6N03LAG

IPDH6N03LA G IPFH6N03LA GIPSH6N03LA G IPUH6N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 6mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 17

Datasheet: IPI084N06L3G , IPI04N03LA , IPI04CN10N , IPI029N06N , IPI020N06N , IPF13N03LAG , IPF135N03LG , IPF050N03LG , AO4407A , IPDH4N03LAG , IPD80R2K8CE , IPD80R1K4CE , IPD80R1K0CE , IPD65R950CFD , IPD65R950C6 , IPD65R660CFDA , IPD65R420CFDA .

History: STU80N4F6 | IXTP55N075T

Keywords - IPDH6N03LAG MOSFET datasheet

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