IPD80R1K4CE Specs and Replacement

Type Designator: IPD80R1K4CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-252

IPD80R1K4CE substitution

- MOSFET ⓘ Cross-Reference Search

 

IPD80R1K4CE datasheet

 ..1. Size:2292K  infineon
 ipd80r1k4ce ipu80r1k4ce.pdf pdf_icon

IPD80R1K4CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine... See More ⇒

 5.1. Size:971K  infineon
 ipd80r1k4p7.pdf pdf_icon

IPD80R1K4CE

IPD80R1K4P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and ... See More ⇒

 6.1. Size:2278K  infineon
 ipd80r1k0ce ipu80r1k0ce.pdf pdf_icon

IPD80R1K4CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K0CE, IPU80R1K0CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine... See More ⇒

 6.2. Size:243K  inchange semiconductor
 ipd80r1k0ce.pdf pdf_icon

IPD80R1K4CE

isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CE FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒

SHOW MORE

Detailed specifications: IPI029N06N, IPI020N06N, IPF13N03LAG, IPF135N03LG, IPF050N03LG, IPDH6N03LAG, IPDH4N03LAG, IPD80R2K8CE, AO4468, IPD80R1K0CE, IPD65R950CFD, IPD65R950C6, IPD65R660CFDA, IPD65R420CFDA, IPD65R420CFD, IPD65R250E6, IPD65R250C6

Keywords - IPD80R1K4CE MOSFET specs

 IPD80R1K4CE cross reference

 IPD80R1K4CE equivalent finder

 IPD80R1K4CE pdf lookup

 IPD80R1K4CE substitution

 IPD80R1K4CE replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility