IPD80R1K4CE - параметры транзистора MOSFET, его аналоги, datasheet

IPD80R1K4CE Datasheet (PDF)

..1. Size:2292K infineon
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R1K4CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R1K4CE, IPU80R1K4CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

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IPD80R1K4P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

6.1. Size:2278K infineon
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R1K0CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R1K0CE, IPU80R1K0CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

6.2. Size:243K inchange semiconductor
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isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

Другие MOSFET... IPI029N06N , IPI020N06N , IPF13N03LAG , IPF135N03LG , IPF050N03LG , IPDH6N03LAG , IPDH4N03LAG , IPD80R2K8CE , IRFP064N , IPD80R1K0CE , IPD65R950CFD , IPD65R950C6 , IPD65R660CFDA , IPD65R420CFDA , IPD65R420CFD , IPD65R250E6 , IPD65R250C6 .