IPD60R380E6 Specs and Replacement
Type Designator: IPD60R380E6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-252
IPD60R380E6 substitution
- MOSFET ⓘ Cross-Reference Search
IPD60R380E6 datasheet
ipd60r380e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.5 Final Power Management & Multimarket C lMO e n i t I I I D O O D 1 Descripti n t b tab C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n 2 pi neee b In ine n e n l ie C... See More ⇒
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.6 Final Power Management & Multimarket C lMO e n i t I I I D O O D 1 Descripti n t b tab C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n 2 pi neee b In ine n e n l ie C... See More ⇒
ipd60r380e6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R380E6 FEATURES With TO-252(DPAK) packaging With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC si... See More ⇒
Detailed specifications: IPD65R1K4C6, IPD65R190C7, IPD60R800CE, IPD60R650CE, IPD60R600P6, IPD60R460CE, IPD60R400CE, IPD60R380P6, IRFB4227, IPD60R2K1CE, IPD60R1K5CE, IPD60R1K0CE, IPD50R950CE, IPD50R800CE, IPD50R650CE, IPD50R500CE, IPD50R3K0CE
Keywords - IPD60R380E6 MOSFET specs
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