IPD60R380E6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPD60R380E6
Маркировка: 6R380E6
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 83 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 10.6 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 46 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.38 Ohm
Тип корпуса: TO-252
Аналог (замена) для IPD60R380E6
IPD60R380E6 Datasheet (PDF)
ipd60r380e6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.5FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.6FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C
ipd60r380e6.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD60R380E6FEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggednessExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC si
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R380P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R380P6, IPA60R380P6, IPD60R380P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf
IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli
ipd60r380p6.pdf
isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc
ipd60r380c6.pdf
isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS
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