IPD60R2K1CE MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD60R2K1CE
Marking Code: 6R2K1CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 12 pF
Maximum Drain-Source On-State Resistance (Rds): 2.1 Ohm
Package: TO-252
IPD60R2K1CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD60R2K1CE Datasheet (PDF)
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