Справочник MOSFET. IPD60R2K1CE

 

IPD60R2K1CE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPD60R2K1CE
   Маркировка: 6R2K1CE
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 22 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 2.3 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 7 ns
   Выходная емкость (Cd): 12 pf
   Сопротивление сток-исток открытого транзистора (Rds): 2.1 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для IPD60R2K1CE

 

 

IPD60R2K1CE Datasheet (PDF)

 ..1. Size:2232K  infineon
ipd60r2k1ce ipu60r2k1ce.pdf

IPD60R2K1CE IPD60R2K1CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R2K1CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R2K1CE, IPU60R2K1CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 ..2. Size:242K  inchange semiconductor
ipd60r2k1ce.pdf

IPD60R2K1CE IPD60R2K1CE

isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CEFEATURESStatic drain-source on-resistance:RDS(on)2.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 6.1. Size:603K  infineon
ipd60r2k0pfd7s.pdf

IPD60R2K1CE IPD60R2K1CE

IPD60R2K0PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 6.2. Size:1300K  infineon
ipd60r2k0c6 2.0.pdf

IPD60R2K1CE IPD60R2K1CE

MOSFET+

 6.3. Size:938K  infineon
ipd60r2k0c6.pdf

IPD60R2K1CE IPD60R2K1CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorlPD60R2KOC6Data SheetRev. 2.1FinalIndustrial & Multimarket +

 6.4. Size:242K  inchange semiconductor
ipd60r2k0c6.pdf

IPD60R2K1CE IPD60R2K1CE

isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6FEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV G

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