All MOSFET. IPD024N06N Datasheet

 

IPD024N06N MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD024N06N

SMD Transistor Code: 024N06N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.8 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 1200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0024 Ohm

Package: TO-252

IPD024N06N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD024N06N Datasheet (PDF)

1.1. ipd024n06n.pdf Size:447K _infineon

IPD024N06N
IPD024N06N

Type IPD024N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS(on),max 2.4 mW • Superior thermal resistance ID 90 A • N-channel, normal level QOSS nC 81 • Qualified according to JEDEC1) for target applications QG(0V..10V) nC 71 • Pb-free lead plating; RoHS compliant • Halogen-fre

5.1. ipd025n06n.pdf Size:577K _infineon

IPD024N06N
IPD024N06N

Type IPD025N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V • Optimized for synchronous rectification RDS(on),max 2.5 mW • 100% avalanche tested ID 90 A • Superior thermal resistance QOSS 81 nC • N-channel, normal level QG(0V..10V) 71 nC • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Haloge

Datasheet: IPD060N03L , IPD053N06N , IPD050N03L , IPD04N03LBG , IPD040N03L , IPD03N03LAG , IPD031N03L , IPD025N06N , CEP83A3 , IPB90R340C3 , IPB80N06S3L-05 , IPB65R660CFDA , IPB65R420CFD , IPB65R310CFDA , IPB65R310CFD , IPB65R225C7 , IPB65R190E6 .

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