IPD024N06N Datasheet and Replacement
Type Designator: IPD024N06N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO-252
IPD024N06N substitution
IPD024N06N Datasheet (PDF)
ipd024n06n.pdf

TypeIPD024N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for synchronous rectificationVDS 60 V 100% avalanche testedRDS(on),max 2.4mW Superior thermal resistanceID 90 A N-channel, normal levelQOSS nC81 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC71 Pb-free lead plating; RoHS compliant Halogen-fre
ipd025n06n.pdf

TypeIPD025N06NOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 2.5 mW 100% avalanche testedID 90 A Superior thermal resistanceQOSS 81 nC N-channel, normal levelQG(0V..10V) 71 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge
ipd025n06n.pdf

isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06NFEATURESStatic drain-source on-resistance:RDS(on)2.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
Datasheet: IPD060N03L , IPD053N06N , IPD050N03L , IPD04N03LBG , IPD040N03L , IPD03N03LAG , IPD031N03L , IPD025N06N , AO4407 , IPB90R340C3 , IPB80N06S3L-05 , IPB65R660CFDA , IPB65R420CFD , IPB65R310CFDA , IPB65R310CFD , IPB65R225C7 , IPB65R190E6 .
History: APT12057LFLLG
Keywords - IPD024N06N MOSFET datasheet
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History: APT12057LFLLG



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