IPD024N06N Datasheet. Specs and Replacement

Type Designator: IPD024N06N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO-252

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IPD024N06N datasheet

 ..1. Size:447K  infineon
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IPD024N06N

Type IPD024N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for synchronous rectification VDS 60 V 100% avalanche tested RDS(on),max 2.4 mW Superior thermal resistance ID 90 A N-channel, normal level QOSS nC 81 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 71 Pb-free lead plating; RoHS compliant Halogen-fre... See More ⇒

 9.1. Size:577K  infineon
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IPD024N06N

Type IPD025N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V Optimized for synchronous rectification RDS(on),max 2.5 mW 100% avalanche tested ID 90 A Superior thermal resistance QOSS 81 nC N-channel, normal level QG(0V..10V) 71 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge... See More ⇒

 9.2. Size:242K  inchange semiconductor
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IPD024N06N

isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N FEATURES Static drain-source on-resistance RDS(on) 2.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Optimized for synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒

Detailed specifications: IPD060N03L, IPD053N06N, IPD050N03L, IPD04N03LBG, IPD040N03L, IPD03N03LAG, IPD031N03L, IPD025N06N, SPP20N60C3, IPB90R340C3, IPB80N06S3L-05, IPB65R660CFDA, IPB65R420CFD, IPB65R310CFDA, IPB65R310CFD, IPB65R225C7, IPB65R190E6

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