IRFP452 MOSFET. Datasheet pdf. Equivalent

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IRFP452 Datasheet (PDF)

4.1. irfp450.pdf Size:276K _st

IRFP450 N-CHANNEL 500V - 0.31? - 14A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP450 500V < 0.38? 14 A TYPICAL RDS(on) = 0.31? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced grea

4.2. irfp450-1-2-3-fi.pdf Size:489K _st2

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4.3. irfp450lc.pdf Size:159K _international_rectifier

PD - 9.1231 IRFP450LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

4.4. irfp450.pdf Size:876K _international_rectifier

PD - 94852 IRFP450PbF • Lead-Free 11/17/03 Document Number: 91233 www.vishay.com 1 IRFP450PbF Document Number: 91233 www.vishay.com 2 IRFP450PbF Document Number: 91233 www.vishay.com 3 IRFP450PbF Document Number: 91233 www.vishay.com 4 IRFP450PbF Document Number: 91233 www.vishay.com 5 IRFP450PbF Document Number: 91233 www.vishay.com 6 IRFP450PbF TO-247AC Package Outlin

4.5. irfp450n.pdf Size:121K _international_rectifier

PD- 94216 SMPS MOSFET IRFP450N HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37? 14A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current

4.6. irfp450npbf.pdf Size:199K _international_rectifier

PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37? 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volta

4.7. irfp450apbf.pdf Size:224K _international_rectifier

PD -95054 SMPS MOSFET IRFP450APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40? 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche V

4.8. irfp450a.pdf Size:101K _international_rectifier

PD -91884 SMPS MOSFET IRFP450A HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40? 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

4.9. irfp450a.pdf Size:942K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

4.10. irfp450a_sihfp450a.pdf Size:302K _vishay

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.40 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 • Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configuration Sin

4.11. irfp450_sihfp450.pdf Size:1560K _vishay

IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.40 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 150 COMPLIANT • Fast Switching Qgs (nC) 20 • Ease of Paralleling Qgd (nC) 80 • Simple Drive Requirements Configuration Single • Lead (Pb)-free Available

4.12. irfp450lc_sihfp450lc.pdf Size:1566K _vishay

IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 500 • Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.40 • Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 • Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 • Isolated Central Mounting Hole Qgd (nC) 35 • Dynamic dV/dt Rated Configuration Single • Repeti

4.13. irfp450.pdf Size:46K _ixys

IRFP 450 VDSS = 500 V Standard Power MOSFET ID(cont) = 14 A ? RDS(on) = 0.40 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 500 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C14 A G = Gate, D = Drain, IDM TC = 25°C, pulse width limited by TJM 56 A S = Source, T

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