IPB065N03L PDF and Equivalents Search

pe %% # ! % # ! % (>.;?6?@ %>E Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m - @? >2H Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Q "2=@86? 7B66 244@... See More ⇒

isc N-Channel MOSFET Transistor IPB065N03L DESCRIPTION Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SY... See More ⇒

IPB065N06L G IPP065N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G P ( 381>>581>35=5>C ... See More ⇒

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 3 Power-Transistor, 100 V IPB065N10N3 G D PAK 1 Description Features N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 175 ... See More ⇒

IPB065N15N3 G 3 Power-Transistor Product Summary Features V 150 V DS Q ' 381>>5?B=1... See More ⇒

Isc N-Channel MOSFET Transistor IPB065N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒