IPB065N03L Datasheet. Specs and Replacement

Type Designator: IPB065N03L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-263

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IPB065N03L datasheet

 ..1. Size:614K  infineon
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IPB065N03L

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 ..2. Size:242K  inchange semiconductor
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IPB065N03L

isc N-Channel MOSFET Transistor IPB065N03L DESCRIPTION Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SY... See More ⇒

 6.1. Size:738K  infineon
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IPB065N03L

IPB065N06L G IPP065N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G P ( 381>>581>35=5>C ... See More ⇒

 7.1. Size:1157K  infineon
 ipb065n10n3g.pdf pdf_icon

IPB065N03L

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 3 Power-Transistor, 100 V IPB065N10N3 G D PAK 1 Description Features N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 175 ... See More ⇒

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Detailed specifications: IPB107N20NA, IPB100N06S3-04, IPB09N03LAG, IPB09N03LA, IPB085N06LG, IPB080N03L, IPB06N03LA, IPB065N10N3G, IRFZ46N, IPB05N03LBG, IPB05N03LA, IPB057N06N, IPB055N03L, IPB04N03LAT, IPB04N03LA, IPB04CN10NG, IPB049N08N5

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