All MOSFET. IPB049N08N5 Datasheet

 

IPB049N08N5 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB049N08N5

Marking Code: 049N08N5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.8 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 490 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0049 Ohm

Package: TO-263

IPB049N08N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB049N08N5 Datasheet (PDF)

0.1. ipb049n08n5.pdf Size:1130K _infineon

IPB049N08N5
IPB049N08N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB049N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB049N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R pr

0.2. ipb049n08n5.pdf Size:205K _inchange_semiconductor

IPB049N08N5
IPB049N08N5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB049N08N5FEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 6.1. ipb049n06l3g ipp052n06l3g ipp052n06l3 ipb049n06l3 ipp052n06l3 ipb052n06l3.pdf Size:683K _infineon

IPB049N08N5
IPB049N08N5

pe IPB049N06L3 G IPP052N06L3 G 3 Power-TransistorProduct SummaryFeaturesV D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CDI DR I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:

6.2. ipb049n06l3.pdf Size:258K _inchange_semiconductor

IPB049N08N5
IPB049N08N5

Isc N-Channel MOSFET Transistor IPB049N06L3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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