IRFP460A MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP460A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 105 nC
Drain-Source Capacitance (Cd): 3100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm
Package: TO247
IRFP460A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP460A Datasheet (PDF)
0.1. irfp460as.pdf 
Size:115K _international_rectifier
PD-94011A SMPS MOSFET IRFP460AS HEXFET® Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27Ω 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third
0.2. irfp460apbf.pdf Size:206K _international_rectifier
PD- 94853 SMPS MOSFET IRFP460APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27Ω 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanc
0.3. irfp460a.pdf Size:95K _international_rectifier
PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27Ω 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current
0.4. irfp460a sihfp460a.pdf Size:180K _vishay
IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.27 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 105 COMPLIANT Ruggedness Qgs (nC) 26 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 42 and Current Configurat
0.5. irfp460apbf.pdf Size:212K _inchange_semiconductor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460APBF ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-So
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
