All MOSFET. IPB031N08N5 Datasheet

 

IPB031N08N5 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB031N08N5

Marking Code: 031N08N5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.8 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 790 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0031 Ohm

Package: TO-263

IPB031N08N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB031N08N5 Datasheet (PDF)

0.1. ipb031n08n5.pdf Size:1124K _infineon

IPB031N08N5
IPB031N08N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPB031N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPB031N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R

0.2. ipb031n08n5.pdf Size:258K _inchange_semiconductor

IPB031N08N5
IPB031N08N5

Isc N-Channel MOSFET Transistor IPB031N08N5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 7.1. ipb031ne7n3 ipb031ne7n3g.pdf Size:534K _infineon

IPB031N08N5
IPB031N08N5

IPB031NE7N3 GTM 3 Power-TransistorProduct SummaryFeaturesV 7 D Q ( @D9=9J54 D538>??EC B53D96931D9?>R 1 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BCI 1 DQ H35

7.2. ipb031ne7n3.pdf Size:252K _inchange_semiconductor

IPB031N08N5
IPB031N08N5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB031NE7N3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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