IPB020N08N5 Datasheet and Replacement
Type Designator: IPB020N08N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO-263
IPB020N08N5 substitution
IPB020N08N5 Datasheet (PDF)
ipb020n08n5.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB020N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB020N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance
ipb020n04n ipb020n04ng.pdf

pe # ! ! #:A0A=:2?DQ "2=@86? 7B66 244@B5:?8 D@ # Type Package Marking#)
ipb020ne7n3 ipb020ne7n3g.pdf

# ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35
ipb020n10n5lf.pdf

IPB020N10N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain
Datasheet: IPB039N10N3GE8187 , IPB034N03L , IPB031N08N5 , IPB029N06N3GE8187 , IPB027N10N5 , IPB026N06N , IPB024N08N5 , IPB020N10N5 , BS170 , IPB017N10N5 , IPB017N08N5 , IPB015N08N5 , IPB015N04L , IPB014N06N , IPB011N04L , IPB010N06N , IPB009N03L .
History: FDP6035L | BSP300 | SI6923DQ | SML1001H9 | RFT3055LE | SFR9120 | FDP80N06
Keywords - IPB020N08N5 MOSFET datasheet
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History: FDP6035L | BSP300 | SI6923DQ | SML1001H9 | RFT3055LE | SFR9120 | FDP80N06



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