IPB020N08N5 Specs and Replacement
Type Designator: IPB020N08N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO-263
IPB020N08N5 substitution
IPB020N08N5 datasheet
ipb020n08n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB020N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB020N08N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance... See More ⇒
ipb020n04n ipb020n04ng.pdf
pe # ! ! # A0A= 2?D Q "2=@86? 7B66 244@B5 ?8 D@ # Type Package Marking #)... See More ⇒
ipb020ne7n3 ipb020ne7n3g.pdf
# ! ! TM # A0 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC 1 D Q H35... See More ⇒
ipb020n10n5lf.pdf
IPB020N10N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 100 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain ... See More ⇒
Detailed specifications: IPB039N10N3GE8187 , IPB034N03L , IPB031N08N5 , IPB029N06N3GE8187 , IPB027N10N5 , IPB026N06N , IPB024N08N5 , IPB020N10N5 , IRF730 , IPB017N10N5 , IPB017N08N5 , IPB015N08N5 , IPB015N04L , IPB014N06N , IPB011N04L , IPB010N06N , IPB009N03L .
Keywords - IPB020N08N5 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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