IPB010N06N PDF and Equivalents Search

 

IPB010N06N Specs and Replacement


   Type Designator: IPB010N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 3400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: TO-263-7
 

 IPB010N06N substitution

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IPB010N06N datasheet

 ..1. Size:611K  infineon
ipb010n06n.pdf pdf_icon

IPB010N06N

IPB010N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V Optimized for synchronous rectification RDS(on),max 1.0 mW 100% avalanche tested ID 180 A Superior thermal resistance Qoss 228 nC N-channel, normal level QG(0V..10V) 208 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-f... See More ⇒

 9.1. Size:1149K  infineon
ipb017n08n5.pdf pdf_icon

IPB010N06N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB017N08N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB017N08N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R... See More ⇒

 9.2. Size:670K  infineon
ipp015n04n ipb015n04n.pdf pdf_icon

IPB010N06N

pe ## ! ! # ! ! D # A0;53E;A@D R ' 5 3@@7> @AC?3> >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E ( & D n) R .7CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 E7DE76 R )4 8C77 B>3E;@9 + A", 5A?B>;3@E R "... See More ⇒

 9.3. Size:605K  infineon
ipb014n06n.pdf pdf_icon

IPB010N06N

Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for synchronous rectification VDS 60 V 100% avalanche tested RDS(on),max 1.4 mW Superior thermal resistance ID 180 A N-channel, normal level QOSS nC 119 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant ... See More ⇒

Detailed specifications: IPB020N10N5 , IPB020N08N5 , IPB017N10N5 , IPB017N08N5 , IPB015N08N5 , IPB015N04L , IPB014N06N , IPB011N04L , IRF540 , IPB009N03L , IPA80R650CE , IPA80R460CE , IPA80R310CE , IPA80R1K4CE , IPA80R1K0CE , IPA65R650CE , IPA65R420CFD .

Keywords - IPB010N06N MOSFET specs

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